ESD5307H 6-lines, 1-vcc, uni-directional, ultra-low capacitance transient voltage suppressors descriptions the ESD5307H is an ultra-low capacitance tvs (transient voltage suppressor) array designed to protect high speed data interfaces. it has been specifically designed to protect sensitive electronic components which are connected to data and transmission lines from over-stress caused by esd (electrostatic discharge). the ESD5307H incorporates six lines of ultra- low capacitance tvs diodes and one separate tvs diode plus for vbus. the ESD5307H may be used to provide esd protection up to 20kv (contact discharge) according to iec61000-4-2, and withstand peak pulse current up to 4a (8/20 s) according to iec61000-4-5. the ESD5307H is available in msop-8 package. standard products are pb-free and halogen-free. features ? stand-off voltage: 5v max. ? transient protection for each line according to iec61000-4-2 (esd): 20kv (contact discharge) iec61000-4-4 (eft): 40a (5/50ns) iec61000-4-5 (surge): 4a (8/20 s) ? ultra-low capacitance: c j = 0.4pf typ. ? ultra-low leakage current: i r <1na typ. ? low clamping voltage: v cl = 19v @ i pp = 16a(tlp) applications ? usb 2.0 and usb 3.0 ? hdmi 1.3 and hdmi 1.4 ? sata and esata ? dvi ? ieee 1394 ? pci express ? portable electronics and notebooks msop-8l (bottom view) circuit diagram ESD5307H = device code yymm = data code marking (top view) order information device package shipping ESD5307H-8tr msop-8l 3000/tape&reel 1 2 3 4 5 6 8 7 5307h yyww i/o1 i/o2 i/o3 i/o4 vcc gnd i/o6 i/o5 8 7 2 3 4 5 6 1 1 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
absolute maximum ratings electrical characteristics (t a =25 o c, unless otherwise noted) parameter symbol rating unit operation junction temperature t j 125 o c lead temperature t l 260 o c storage temperature t stg -55~150 o c i/o to gnd esd according to iec61000-4-2 air discharge v esd 20 kv esd according to iec61000-4-2 contact discharge 20 peak pulse power (t p = 8/20 s) p pk 60 w peak pulse current (t p = 8/20 s) i pp 4 a vbus to gnd esd according to iec61000-4-2 air discharge v esd 30 kv esd according to iec61000-4-2 contact discharge 30 peak pulse power (t p = 8/20 s) p pk 144 w peak pulse current (t p = 8/20 s) i pp 9 a parameter symbol condition min. typ. max. unit i/o to gnd reverse maximum working voltage v rwm 5.0 v reverse leakage current i r v rwm = 5v <1 100 na reverse breakdown voltage v br i t = 1ma 7.0 8.0 9.0 v forward voltage v f i t = 10ma 0.6 0.9 1.2 v clamping voltage v cl i pp = 16a, t p = 100ns 19 v dynamic resistance r dyn 0.65 ? clamping voltage v cl i pp = 1a, t p = 8/20 s 11 v i pp = 4a, t p = 8/20 s 15 v junction capacitance c j v r = 0v, f = 1mhz any i/o pin to gnd 0.40 0.65 pf v r = 0v, f = 1mhz between any i/o pin 0.25 0.40 pf vbus to gnd reverse maximum working voltage v rwm 7 v reverse leakage current i r v rwm = 7v <1 100 na reverse breakdown voltage v br i t = 1ma 7.5 8.8 v forward voltage v f i t = 10ma 0.4 1.5 v clamping voltage v cl i pp = 1a, t p = 8/20 s 9 v i pp = 9a, t p = 8/20 s 16 v junction capacitance c j v r = 0v, f = 1mhz vbus to gnd 52 pf ESD5307H 2 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
typical characteristics (t a =25 o c, unless otherwise noted) 8/20 s waveform per iec61000-4-5 clamping voltage vs. peak pulse current i/o to gnd non-repetitive peak pulse power vs. pulse time i/o to gnd contact discharge current waveform per iec61000-4-2 capacitance vs. reveres voltage i/o to gnd power derating vs. ambient temperature i/o to gnd 0 5 10 15 20 25 30 35 40 0 10 20 30 40 50 60 70 80 90 100 110 t 2 t 1 front time: t 1 = 1.25 ?? t = 8 ? s time to half-value: t 2 = 20 ? s peak pulse current (%) time ( ? s) t t 60ns 30ns t r = 0.7~1ns 10 90 100 current (%) time (ns) 012345 8 10 12 14 pulse waveform: t p = 8/20 ? s v c - clamping voltage (v) i pp - peak pulse current (a) 012345 0.20 0.25 0.30 0.35 0.40 0.45 0.50 between any i/o pins i/o to gnd f = 1mhz c j - junction capacitance (pf) v r - reverse voltage (v) 1 10 100 1000 1 10 100 1000 peak pulse power (w) pulse time ( ? s) 0 255075100125150 0 20 40 60 80 100 % of rated power t a - ambient temperature ( o c) ESD5307H 3 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
typical characteristics (t a =25 o c, unless otherwise noted) esd clamping (+8kv contact discharge per iec61000-4-2) esd clamping (-8kv contact discharge per iec61000-4-2) i/o to gnd tlp measurement i/o to gnd clamping voltage vs. peak pulse current vbus to gnd i/o to gnd capacitance vs. reveres voltage vbus to gnd 0 2 4 6 8 10121416182022 -2 0 2 4 6 8 10 12 14 16 18 20 z 0 = 50 ? t r = 2ns t p = 100ns tlp current (a) tlp voltage (v) 0369 8 10 12 14 16 pulse waveform: tp=8/20us v c - clamping voltage (v) ipp - peak pulse current (a) 012345 30 35 40 45 50 55 60 f=1mhz c - junction capacitance (pf) v r - reverse voltage (v) ESD5307H 4 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
typical characteristics (t a =25 o c, unless otherwise noted) non-repetitive peak pulse power vs. pulse time vbus to gnd esd clamping (+8kv contact discharge per iec61000-4-2) power derating vs. temperature vbus to gnd esd clamping (-8kv contact discharge per iec61000-4-2) vbus to gnd vbus to gnd 1 10 100 1000 1 10 100 1000 peak pulse power (w) pulse duration(us) 0 25 50 75 100 125 150 0 20 40 60 80 100 % of rated power t a - ambient temperature ( o c) ESD5307H 5 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
package outline dimensions msop-8l symbol dimensions in millimeters dimensions in inches min. max. min. max. a 0.820 1.100 0.032 0.043 a1 0.020 0.150 0.001 0.006 a2 0.750 0.950 0.030 0.037 b 0.250 0.380 0.010 0.015 c 0.090 0.230 0.004 0.009 d 2.900 3.100 0.114 0.122 e 0.650 (bsc) 0.0.026 (bsc) e 2.900 3.100 0.114 0.122 e1 4.750 5.050 0.187 0.199 l 0.400 0.800 0.016 0.031 0 o 6 o 0 o 6 o ESD5307H 6 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
|
